PRR Project
Assistant Researcher Physics of Surfaces and Interfaces in Semiconductors,
Project sheet
Name
Assistant Researcher Physics of Surfaces and Interfaces in Semiconductors,Total project amount
246,79 thousand €Amount paid
0 €Non-refundable funding
246,79 thousand €Loan funding
0 €Start date
01.02.2025Expected end date
31.03.2026Dimension
ResilienceComponent
Qualifications and SkillsInvestment
Science Plus TrainingOperation code
02/C06-i06/2024.P2023.11076.TENURE.027Summary
Position: Assistant Researcher on Physics of Surfaces and Interfaces in SemiconductorsJob Description: We are seeking a highly motivated and skilled Assistant Researcher in the field of Surfaces and Interfaces in Semiconductors to join our dynamic team at NOVA FCT / CENIMAT|i3N. The researcher will be responsible for conducting cutting-edge research to advance our understanding regarding semiconductor surface properties, particularly when using low-temperature deposited materials, including thin films and nanostructures.Key Responsibilities:Design and execute experiments to characterize surfaces and interfaces of semiconductor nanomaterials using x-ray photoelectron spectroscopy (XPS), scanning/transmission electron microscopy (SEM/TEM), Mott-Schottky analysis and gated-Hall effect measurements;Conceive/configure in-situ characterization methods for surface/interfaces within nanomaterial deposition/synthesis tools;Collaborate with CENIMAT|i3N team members to adapt surface/interface characterization methodologies to specific needs of their material systems;Manage the surface analysis laboratory at CENIMAT|i3N, including training of new users, tool management and external service provision;Contribute to the publication of research findings in reputable scientific journals.Support the mentoring of undergraduate and graduate students participating in research activities related to semiconductor surfaces and interfaces.Scientific Profile: The ideal candidate will possess the following qualifications and attributes:Ph.D. in Materials Science, Physics or related fields with a strong focus on Semiconductor Materials.Proven expertise in characterization of semiconductor surfaces and interfaces as well as on thin film growth and/or nanostructure synthesis, with a track record of successful projects.Proficiency in operating and maintaining large laboratory equipment for surface and interface analysis, such as XPS, SEM or TEM.Strong analytical and problem-solving skills, with the ability to interpret complex data sets and draw meaningful conclusions.Strong publication record in reputable scientific journals, demonstrating the ability to contribute novel insights to the field.Excellent communication and collaboration skills, with the ability to work effectively within interdisciplinary teams.Rationale:Understanding the behavior of surfaces and interfaces in semiconductor materials is critical for the development of next-generation devices, as surfaces and interfaces significantly influence the performance, reliability, and functionality of electronic and optoelectronic devices. Aspects such as carrier transport, chemical reactivity, band alignment, among others, strongly depend on phenomena at surfaces and interfaces. This is even more relevant when i) nanomaterials and nanoscale devices are considered (properties move from bulk-dependent to surface-dependent) and ii) low-temperature processes are used for material synthesis/growth (defect density generally increases, demanding for deeper understanding on how to control and effectively use them). Given the global premises at CENIMAT|i3N on setting as research pillars sustainable, low-temperature materials and processing techniques to promote scientific excellence and innovation in Sustainable Functional Advanced Materials at nanoscale level, gaining advanced knowledge and control of surfaces and interfaces is thus of utmost importance.This position is integrated within the Materials for Electronics, Optoelectronics and Processes (MEON) group at CENIMAT|i3N, which is organized in three research areas (RA): RA#1 – Flexible and sustainable electronics; RA#2 – Energy harvesting, conversion and storage; RA#3 – Bioelectronic and biomedical devices. These are transversally supported by three Satellite RA (SRA): SRA#1 – Nanomaterials synthesis and deposition; SRA#2 – Micro and nanopatterning; SRA#3 – Advanced characterization. Surface and interface analysis then perfectly fits the purpose of satellite research areas, particularly SRA#3, significantly supporting internal developments within RA#1-3. Nevertheless, the impact of the knowledge generated in this position is also expected to extend to other groups at the Associated Laboratory CENIMAT|i3N, particularly at Aveiro hub (e.g., Physics of Advanced Materials and Devices and Theoretical and Computational Physics Group), contributing to promote further synergies among the two hubs of i3N.
Beneficiaries
The two types are::
- Direct Beneficiaries are those whose funding and projects to implement are part of the Recovery and Resilience Plan that has been negotiated and approved by the European Union;
- Final Beneficiaries are those whose funding and projects to implement are approved following a selection process through Calls for Applications.
Call for applications
As part of the Call for Applications, submissions are requested to select the projects and final beneficiaries to whom funding will be awarded. Specific selection criteria are defined for each call, which must be reflected in the applications submitted and assessed.
The project is appraised on the basis of its compliance with the selection criteria laid down in the calls for applications, and a final score may be awarded, where applicable.
Final evaluation score
The components for calculating the assessment score can be found in the selection criteria document mentioned below.
Selection criteria
Beneficiaries
Intermediate beneficiaries
Procurement
Beneficiaries representing public entities implement their project by signing one or more contracts with suppliers for goods or services through public procurement procedures.
To ensure and provide the utmost transparency in all these contracts, a list of the contracts that were signed under this project is available here, along with the information available on the Base.Gov platform. Please note that, according to the legislation in force at the time the contract was signed, some exceptions do not require the publication of the contracts signed on this platform, and, therefore, no information is available in such cases.
Geographic distribution
246,79 thousand €
Total amount of the project
Where was the money spent
By county
1 county financed .
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Lisboa 246,79 thousand € ,